| PART |
Description |
Maker |
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation
ALSC
|
| HYM364025GS-60 HYM364025GS-50 HYM364025S-60 HYM364 |
4M x 36-Bit EDO - DRAM Module 4米36位EDO公司-记忆体模
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
4M x 36-Bit EDO - DRAM Module 4M X 36 EDO DRAM MODULE, 50 ns, SMA72
4M x 36 Bit EDO DRAM Module with Parity
|
INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY |
256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HY5118164CSLTC-60 HY5116164CJC-80 |
1M X 16 EDO DRAM, 60 ns, PDSO44
1M X 16 EDO DRAM, 80 ns, PDSO42
|
HYNIX SEMICONDUCTOR INC
|
| HYM72V8025GS-60 HYM72V8025GS-50 HYM72V8035GS-60 HY |
8M x 72 Bit ECC EDO DRAM Module buffered
8M x 72-Bit EDO- DRAM Module (ECC - Module)
8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 60 ns, DMA168
8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| IS41C4100-35J IS41LV4100-60JI IS41C4100 IS41C4100- |
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 4 EDO DRAM, 60 ns, PDSO20
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| HYM324025GS-60 HYM324025GS-50 HYM324025S-60 HYM324 |
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 60 ns, SMA72
4M x 32-Bit EDO-DRAM Module 4米32位江户记忆体模组
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 50 ns, SMA72
4M x 32 Bit EDO DRAM Module
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM511640 |
16M EDO DRAM (4-Mword x 4-bit), 50ns
16M EDO DRAM (4-Mword x 4-bit), 60ns
16M EDO DRAM (4-Mword x 4-bit), 70ns
|
Elpida Memory
|
