| PART |
Description |
Maker |
| MCM40100 MCM40100S10 MCM40100S80 MCM40100SG10 MCM4 |
1M x 40 Bit Dynamic Random Access Memory Module 1M X 40 FAST PAGE DRAM MODULE, 80 ns, SMA72
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 1M X 40 FAST PAGE DRAM MODULE, 100 ns, SMA72
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MCM54260BT80 |
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
|
MOTOROLA INC
|
| IS41LV16257A-35KL |
256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
|
INTEGRATED SILICON SOLUTION INC
|
| V53C104DK80 |
256K X 4 FAST PAGE DRAM, 80 ns, PDSO20
|
MOSEL-VITELIC
|
| MN414170CTT |
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
|
PANASONIC CORP
|
| M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位（16777216 - Word位）动态随机存储器
4M X 16 FAST PAGE DRAM, 50 ns, PDSO50
16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| KM44C256A |
256k x 4Bit CMOS DRAM with Fast Page Mode
|
Samsung Electronics
|
| NN514256 |
Fast Page Mode CMOS 256k x 4 Bit DRAM
|
NPN
|
| KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
|
| V53C104 V53C104P-12 V53C104Z-70 V53C104Z-70L V53C1 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
