| PART |
Description |
Maker |
| NGB8206ANT4G NGB8206NT4G NGB8206ANSL3G NGB8206N11 |
Ignition IGBT 20 A, 350 V, N.Channel D2PAK
|
ON Semiconductor
|
| MGP19N35CL MGB19N35CL MGB19N35CLT4 |
Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK
|
ONSEMI[ON Semiconductor]
|
| 2N7002BK |
60 V, 350 mA N-channel Trench MOSFET 350 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| 7812 AD7812 AD7812YRU AD7811 AD7811YN AD7811YR AD7 |
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs
10-Bit, 8-Channel, 350 kSPS, Serial A/D Converter
10-Bit, 4-Channel, 350 kSPS, Serial A/D Converter
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs
|
AD[Analog Devices]
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| STGP10N60 STGP10N60L 6209 |
25 A, 600 V, N-CHANNEL IGBT, TO-220AB
From old datasheet system
N-CHANNEL 10A - 600V TO-220 LOGIC LEVEL IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| HGTP1N120BN HGTD1N120BNS HGTD1N120BNS9A |
5.3A, 1200V, NPT Series N-Channel IGBT
5.3A, 1200V, NPT Series N-Channel IGBT 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA 5.3 A, 1200 V, N-CHANNEL IGBT, TO-252AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| TP2435 TP2435N8 TP2435NW |
P-Channel Enhancement-Mode Vertical DMOS FETs 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Supertex Inc
Supertex Inc
SUTEX[Supertex, Inc]
Supertex, Inc.
|
| RJH60F7ADPK RJH60F7ADPK-00-T0 |
90 A, 600 V, N-CHANNEL IGBT
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
