| PART |
Description |
Maker |
| 1110C 1102D 1106C 1102C 1110FD 1110FC 1102UFD 1102 |
200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1.5 A, SILICON, BRIDGE RECTIFIER DIODE
|
Voltage Multipliers, Inc.
|
| 1402 1406 1410F 1410UF 1406UF 1402UF |
200 V - 1,000 V Single Phase Bridge 12.0 A Forward Current 70 ns - 3000 ns Recovery Time 12 A, SILICON, BRIDGE RECTIFIER DIODE
|
Voltage Multipliers, Inc.
|
| WL02F WL005F L08F WL02FB |
Bridge Rectifiers (Round)
1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
|
| LTI602UFT LTI606UFT LTI602FT |
200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time 3 PHASE, 40 A, SILICON, BRIDGE RECTIFIER DIODE
|
Voltage Multipliers, Inc.
|
| GBL40004 GBL400 GBL406 GBL401 GBL402 GBL404 |
3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
|
Pan Jit International Inc.
|
| 3402A 3406A 3402FA 3410FA |
200 V - 1,000 V Three Phase Bridge 3 PHASE, 20 A, SILICON, BRIDGE RECTIFIER DIODE
|
Voltage Multipliers, Inc.
|
| DF02MA-E3 VISHAYSEMICONDUCTORS-DF01MA-E3 |
1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
VISHAY SEMICONDUCTORS
|
| GSIB620E3 GSIB620/45 |
2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
VISHAY SEMICONDUCTORS
|
| MT200S |
25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
MICROSEMI CORP-COLORADO
|
| GBPC1002S-G |
10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
