| PART |
Description |
Maker |
| BSM300GA100D BSM300GA120D BSM100GB100D BSM100GB120 |
300 A, 1000 V, N-CHANNEL IGBT
300 A, 1200 V, N-CHANNEL IGBT
100 A, 1000 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
75 A, 1000 V, N-CHANNEL IGBT
200 A, 1000 V, N-CHANNEL IGBT
50 A, 1600 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
|
| BC639L34Z BC639D74Z |
NPN Epitaxial Silicon Transistor 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| 2N3109 2N3109E4 |
1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device
|
SEMELAB LTD
SEME-LAB
|
| BC301-6 BC301-6E1 |
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device in a Hermetically sealed TO39
|
SEMELAB LTD
Seme LAB
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| ZTX360 |
1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR
|
Diodes Incorporated
ETC[ETC]
http://
Electronic Theatre Controls, Inc.
ZETEX PLC
|
| DSS4140V DSS4140V-7 |
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
Diodes Inc.
|
| BC337BU BC33725TAR BC33740TANL BC33716TAR BC33716T |
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Bulk 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Tape & Reel 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Zetex Semiconductor PLC
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT
100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
400 A, 600 V, N-CHANNEL IGBT
|
|
| PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体
60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| IRFG110 2N7334 2N7334-QR-EB |
1000 mA, 100 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
14 LEAD DUAL IN LINE QUAD
|
SEMELAB LTD
Seme LAB
|
|
