| PART |
Description |
Maker |
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| IRF610 FN1576 |
3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RFP2N20L FN2875 |
2A/ 200V/ 3.500 Ohm/ Logic Level/ N-Channel Power MOSFET
2A 200V 3.500 Ohm Logic Level N-Channel Power MOSFET
From old datasheet system
2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| 2SK2874-01L 2SK2874-01S 2SK2874 |
N-channel MOS-FET 6 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| APT30F50B |
N-Channel FREDFET 30 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
|
Microsemi, Corp.
|
| 2SK1937-01 |
SWITCHING DIODE, 85V, SM SOT23 15 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel MOS-FET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| NSLC420 |
2.5 A, 500 V, 3.08 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MICROSEMI CORP
|
| IRFPS43N50K |
47 A, 500 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET
|
VISHAY SILICONIX
|
| 2SK1524 FP15W50 |
15 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| IXFN80N50Q2 |
80 A, 500 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS CORP
|
|
