| PART |
Description |
Maker |
| STK4160MK5 STK4190K5 STK4190MK5 STK4120MK5 STK4110 |
30W x 2-channel power amplifier
2ch./1packge - Power Supply 6W/ch. ~ 100W/ch. THD=0.08%
2ch./1packge, - Power Supply 6W/ch. ~ 100W/ch. THD=0.08%
PIEZO-BUZZER 4.096KHZ 15MM-DIA 9.5NF-30% W/CASING BULK
STK Audio Power Amplifier 沙头角音频功率放大器
TRANSDUCER AUDIO ; Capacitance:14nF; Connector type:2 pin; Diameter, external:28mm; Diameter, panel cut-out:19.05mm; Diameter, pin:0.95mm; Distance, sound level:30cm; Frequency:3500Hz; Frequency, capacitance measurement:1kHz;
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| 3.2000MS23030-101260 MS2 |
10.7mm x 4.7mm x 2.0mm SMD
|
EUROQUARTZ limited
|
| HD1075 HD1075G HD1075O HD1077G HD1077O HD1077R Q68 |
Seven Segment display 7mm 七段显示七毫
Seven Segment display 7mm 7 SEG NUMERIC DISPLAY, SUPER RED, 7 mm
RES.FF, 10K, 100MW, 1% 7 SEG NUMERIC DISPLAY, RED, 7 mm
0.28(7MM) SEVEN SEGMENT NUMERIC DISPLAY
1-Digit LED 7 Segment IC-Compatible W...
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon Technologies
|
| CX-96F CX-96 |
Ultrathin thickness 0.8mm or less. (4.9×3.1×0.7mm)
Ultrathin thickness 0.8mm or less. (4.9.1.7mm) 超薄厚度0.8毫米或更小.9.1.7毫米
Ultrathin thickness 0.8mm or less. (4.93.10.7mm)
Ultrathin thickness 0.8mm or less. (4.9】3.1】0.7mm)
|
Kyocera, Corp.
KSS[Kyocera Kinseki Corpotation]
Kyocera Kinseki Corporation
|
| SML-LX2723UPGC-TR |
7mm x 6mm SURFACE MOUNT HIGH POWER LED
|
LUMEX INC.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| SML-LXL99USBC-TR-5 SML-LXL99USBC-TR_5 SML-LXL99USB |
7.7mm DIA TOP DOME SMT LED HIGH POWER BLUE 5W.
|
LUMEX INC.
|
| PE1001-1 |
Hermetic Seal Solder Contact With 0.012 Pin Diameter, 0.1 Body Diameter And 0.18 Pin Length
|
Pasternack Enterprises, Inc.
|
| SML-LX2723UWC-TR |
7mm x 6mm SURFACE MOUNT HIGH POWER LED ULTRA WHITE , TAPE AND REEL
|
List of Unclassifed Manufacturers
ETC
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