| PART |
Description |
Maker |
| M2V64S20DTP-6L M2V64S30DTP-6L M2V64S40DTP-6L M2V64 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| M5M4V64S30ATP-12 M5M4V64S30ATP-8 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
| THMY7264E0LE-80 THMY7264E0LE-75 |
64M Word x 72 Bit Synchronous DRAM Module(64M字x 72位同步DRAM模块)
|
Toshiba Corporation
|
| HYM72V64736BLT8-HP HYM72V64736BT8-HP HYM72V64736BT |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
SDRAM - Unbuffered DIMM 512MB
|
HYNIX SEMICONDUCTOR INC
|
| MT18LSDT6472DY-13EXX |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 LEAD FREE, DIMM-168
|
Unisonic Technologies Co., Ltd.
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
