| PART |
Description |
Maker |
| SPLMY81X2 |
Passively Cooled Diode Laser Bar, 35 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMY81G2 |
Passively Cooled Diode Laser Bar, 45 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMN98X2 |
Passively Cooled Diode Laser Bar, 40 W cw at 808 nm
|
OSRAM GmbH
|
| SPLE20N81G2 |
Actively Cooled Diode Laser Bar, 1200 W cw at 808 nm
|
OSRAM GmbH
|
| SPLBG98 SPLBW81 SPLBS94 SPLBX83 SPLBX98 SPLBX94 SP |
Unmounted Laser Bar 40 W, 980 nm
Unmounted Laser Bar 20 W, 808 nm
Unmounted Laser Bar 100 W, qcw
Unmounted Laser Bar 30 W, 830 nm
Unmounted Laser Bar 30 W, 980 nm
Unmounted Laser Bar 30 W, 940 nm
Unmounted Laser Bar 30 W, 808 nm
|
Infineon
|
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE
798 nm, LASER DIODE
High Power Density 1W Laser Diode
|
SONY
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
| NX5521EH NX5521EK |
LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
Renesas Electronics Corporation
|
| DL-4038-021 |
Red Laser Diode High Power AlGaInP Laser Diode
|
SANYO
|
