Part Number Hot Search : 
CS10241 TLOH16TP LT1491CS 48L09 AK881707 74AHCT32 SY89296 PKR40F
Product Description
Full Text Search

IRFD120 - (IRFD123) TMOS Field Effect Transistor / Dual In-Line Package

IRFD120_6949846.PDF Datasheet

 
Part No. IRFD120
Description (IRFD123) TMOS Field Effect Transistor / Dual In-Line Package

File Size 126.00K  /  2 Page  

Maker

Motorola



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: IRFD120
Maker: IR
Pack: DIP-4
Stock: 5112
Unit price for :
    50: $0.47
  100: $0.45
1000: $0.42

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ IRFD120 Datasheet PDF Downlaod from Datasheet.HK ]
[IRFD120 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for IRFD120 ]

[ Price & Availability of IRFD120 by FindChips.com ]

 Full text search : (IRFD123) TMOS Field Effect Transistor / Dual In-Line Package
 Product Description search : (IRFD123) TMOS Field Effect Transistor / Dual In-Line Package


 Related Part Number
PART Description Maker
IRFD120 (IRFD123) TMOS Field Effect Transistor / Dual In-Line Package
Motorola
MMBF2202PT1_D ON2097 MMBF2201PT1 MMBF2202PT3 MMBF2 Small-signal MOSFET TMOS single P-channel field effect transistor
Motorola Preferred Device
From old datasheet system
LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
ON Semiconductor
MOTOROLA[Motorola, Inc]
IRF530_D ON0283 IRF530-D IRF530/D 100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门))
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola, Inc.
ON Semiconductor
MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM
ON Semiconductor
Motorola, Inc
MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆
From old datasheet system
TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G TMOS Power FET
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
ONSEMI[ON Semiconductor]
MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system
ON Semiconductor
ETC
Motorola, Inc
MTP50N06V TMOS V?Power Field Effect Transistor
New Jersey Semi-Conductor P...
MTA1N60E FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR
Motorola, Inc.
IRF530 IRF531 IRF533 IRF532 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MGSF3441XT1-D Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
ON Semiconductor
MTA1N60E FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR
Fully Isolated TMOS E-FET / Power Rifld Effect Transistor
MOTOROLA[Motorola, Inc]
 
 Related keyword From Full Text Search System
IRFD120 asynchronous IRFD120 chip IRFD120 informacion de IRFD120 21 ic on line IRFD120 vdd
IRFD120 использование IRFD120 high-speed usb IRFD120 gaas IRFD120 Voltage IRFD120 Octal
 

 

Price & Availability of IRFD120

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.34222483634949