| PART |
Description |
Maker |
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| V58C2512164SBI5 V58C2512804SBJ5 V58C2512804SBLE5 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
64M X 8 DDR DRAM, 0.7 ns, PBGA60
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
| H5PS1G63EFR-C4I H5PS1G63EFR-E3C H5PS1G63EFR-G7Q H5 |
1Gb DDR2 SDRAM
64M X 16 DDR DRAM, 0.35 ns, PBGA84
64M X 16 DDR DRAM, 0.4 ns, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
| M471B5673DZ1-CG8 M471B6474DZ1-CG8 |
256M X 64 DDR DRAM MODULE, DMA204
64M X 64 DDR DRAM MODULE, DMA204
|
|
| NT512D72S8PABG-75T |
64M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
Nanya Technology, Corp.
|
| HY5DU121622ALT-D4 HY5DU121622ALT-M HY5DU12422AT HY |
DDR SDRAM - 512Mb
64M X 8 DDR DRAM, 0.7 ns, PDSO66
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| HMT125S6AFP8C-G7 HMT125S6AFP8C-G8 HMT125S6AFP8C-H8 |
204pin DDR3 SDRAM SODIMMs
128M X 64 DDR DRAM MODULE, 20 ns, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
64M X 64 DDR DRAM MODULE, 20 ns, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
DDR DRAM MODULE, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| HYMP164S64AP6-Y5 HYMP112S64AP6-Y5 |
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| HYMP532S64CLP6-Y5 HYMP564S64CLP6-Y5 HYMP532S64CP6- |
32M X 64 DDR DRAM MODULE, 0.45 ns, DMA200 ROHS COMPLIANT, DIMM-200
64M X 64 DDR DRAM MODULE, 0.45 ns, DMA200 ROHS COMPLIANT, DIMM-200
|
Hynix Semiconductor, Inc.
|
|
