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TP0616N3P001 - 400 mA, 160 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

TP0616N3P001_6854882.PDF Datasheet


Part No.	TP0616N3P001
Description	400 mA, 160 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
File Size	119.60K / 4 Page
Maker	SUPERTEX INC
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Full text search : 400 mA, 160 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

Product Description search : 400 mA, 160 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

Related Part Number

PART	Description	Maker
CMH02	Zener Diode; Application: General; Pd (mW): 400; Vz (V): 11.1 to 11.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 开关电源的应用 Zener Diode; Application: General; Pd (mW): 400; Vz (V): 11.1 to 11.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD Switching Mode Power Supply Applications	Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
FKC3PCM10100/20/400VDCREEL18/360 FKC3PCM10330/10/4	CAPACITOR, FILM/FOIL, POLYCARBONATE, 400 V, 0.0001 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 400 V, 0.00033 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 160 V, 0.0015 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 400 V, 0.001 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 400 V, 0.00047 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 160 V, 0.0047 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 160 V, 0.033 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 400 V, 0.0015 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 630 V, 0.0001 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 160 V, 0.00015 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 160 V, 0.0068 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 160 V, 0.001 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 400 V, 0.00015 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 160 V, 0.0001 uF, THROUGH HOLE MOUNT RADIAL LEADED CAPACITOR, FILM/FOIL, POLYCARBONATE, 400 V, 0.0033 uF, THROUGH HOLE MOUNT RADIAL LEADED	Pulse Engineering, Inc.
E2K-C E2K-C25MY2	Long-distance capacitive proximity sensor Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.5 to 2.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 长途电容式接近传感	Omron Electronics LLC Omron Electronics, LLC
CMH01	Zener Diode; Application: General; Pd (mW): 400; Vz (V): 10.4 to 10.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 开关电源的应用 Zener Diode; Application: General; Pd (mW): 400; Vz (V): 10.4 to 10.8; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Switching Mode Power Supply Applications	Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
ISD380-9 ISD25-15 ISDF65-7 ISD320-16 ISDR320-22 IS	380 A, 900 V, SILICON, RECTIFIER DIODE 25 A, 1500 V, SILICON, RECTIFIER DIODE 65 A, 700 V, SILICON, RECTIFIER DIODE 320 A, 1600 V, SILICON, RECTIFIER DIODE 320 A, 2200 V, SILICON, RECTIFIER DIODE 160 A, 1400 V, SILICON, RECTIFIER DIODE 65 A, 400 V, SILICON, RECTIFIER DIODE 380 A, 1300 V, SILICON, RECTIFIER DIODE 380 A, 1200 V, SILICON, RECTIFIER DIODE 380 A, 1500 V, SILICON, RECTIFIER DIODE 380 A, 600 V, SILICON, RECTIFIER DIODE 380 A, 400 V, SILICON, RECTIFIER DIODE 380 A, 500 V, SILICON, RECTIFIER DIODE 160 A, 900 V, SILICON, RECTIFIER DIODE 160 A, 1000 V, SILICON, RECTIFIER DIODE 160 A, 500 V, SILICON, RECTIFIER DIODE
FTR-P1 FTR-P1CP009W1 FTR-P1CP012W1 FTR-P1CN010W1 F	Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.8 to 3.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.2 to 3.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.4 to 3.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.0 to 3.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 2.9 to 3.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.3 to 3.5; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.1 to 3.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.0 to 3.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.2 to 3.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD	Fujitsu Limited
PI3CH401 PI3CH401ZHE PI3CH401L PI3CH401LE PI3CH401	Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.6 to 6.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.3 to 7.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.7 to 7.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 低电压，5ヘ，4通道2端口NanoSwitch Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.9 to 7.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 低电压，5ヘ，4通道2端口NanoSwitch Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.2 to 7.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 低电压，5ヘ，4通道2端口NanoSwitch	Pericom Semiconductor Corp. Electronic Theatre Controls, Inc. Pericom Semiconductor, Corp.
PPF360M	N Channel MOSFET; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA	Microsemi, Corp.
CMH04	Zener Diode; Application: General; Pd (mW): 400; Vz (V): 11.4 to 11.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD Switching Mode Power Supply Applications	Toshiba Corporation Toshiba Semiconductor
CM400DU-24F	Dual IGBTMOD 400 Amperes/1200 Volts 400 A, 1200 V, N-CHANNEL IGBT	Powerex Power Semiconductor... Powerex Power Semiconductors Powerex, Inc.
RFL4N12 RFL4N15	4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs 4000 mA, 120 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF 4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs	Intersil, Corp. Intersil Corporation
HDM160GS16C	160 X 160 Dots Color Graphic, Low Power w/Touch Screen	HANTRONIX[Hantronix,Inc]

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