| PART |
Description |
Maker |
| S20GBJ40-C |
Voltage 200V ~800V 20.0Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| 1N4246GP 1N4247GP 1N4248GP 1N4245 1N4245GP |
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 400V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 600V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 800V
General Purpose Plastic Rectifier, Forward Current 1.0A, Reverse Voltage 200V
Glass Passivated Junction Rectifier, Forward Current 1.0A, Reverse Voltage 200V
|
Vishay
|
| APT8075 APT8075BN APT8090BN |
POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| SFT1001 |
100AMP HIGH SPEED PNP TRANSISTOR 250 VOLTS
|
SSDI[Solid States Devices, Inc]
|
| KBPC108 KBPC1005 KBPC101 KBPC102 KBPC104 KBPC106 K |
3A,6A single phase rectifier bridges
3 A Single Phase Rectifier Bridges(3A 单向整流器桥) 三单相整流桥3A条单向整流器桥）
6 A Single Phase Rectifier Bridges(6A 单向整流器桥)
1000V Bridge in a D-72 package
800V Bridge in a D-72 package
600V Bridge in a D-72 package
400V Bridge in a D-72 package
200V Bridge in a D-72 package
50V Bridge in a D-72 package
1000V Bridge in a D-46 package
600V Bridge in a D-46 package
400V Bridge in a D-46 package
200V Bridge in a D-46 package
100V Bridge in a D-46 package
50V Bridge in a D-46 package
800V Bridge in a D-46 package
6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
Vishay Siliconix
International Rectifier, Corp.
VISHAY SEMICONDUCTORS
|
| AM29CPL154H-25DC AM29CPL154H-25/BXA AM29CPL154H-25 |
User Programmable Special Function ASIC
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTX2N7219 with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6788U with Standard Packaging
200V Single N-Channel Hi-Rel MOSFET in a TO-259AA package; A IRFI260 with Standard Packaging
800V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAE40 with Standard Packaging
-55V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package; A IRF5NJ5305 with Standard Packaging
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF9110 with Standard Packaging
400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFN340 with Standard Packaging
1000V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFNG50 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTXV2N7237 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANS2N7237 with Standard Packaging
40V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRL7N1404 with Standard Packaging 用户可编程ASIC的特殊功
|
Advanced Micro Devices, Inc.
|
| APT20M38SVR APT20M38SVRG |
200V 67A 0.038W
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| F18107SD600 F18107SD1000 F18107SD1200 F1842SD1600 |
25-100Amp,Diode, SCR/Diode Modules
25-100Amp,Diode, SCR/Diode Modules
|
http://
Cynergy3 Co
|
| BTA10-800AW BTA10-200AW BTA10-400AW BTA10-700AW BT |
TRIAC|800V V(DRM)|10A I(T)RMS|TO-220
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220
TRIAC|700V V(DRM)|10A I(T)RMS|TO-220
Transient Voltage Suppressor Diodes 可控硅| 600V的五（DRM）的| 10A条口（T）的有效值|20
|
Volex PLC
|
