| PART |
Description |
Maker |
| MN12261 MN12C25D MN12C201D |
128 X 16 MASK PROM, 6 ns, PDIP16 0.300 INCH, PLASTIC, DIP-16
38 X 16 MASK PROM, 2 ns, PSIP9
64 X 16 MASK PROM, 2 ns, PDIP16
|
Panasonic, Corp.
PANASONIC CORP
|
| MX23L1610PC-12G MX23L1610TC-12G |
3.3 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM 1M X 16 MASK PROM, 120 ns, PDIP42
Resistor Wirewound 25.5 OHM 1% 0.75W 20PPM AXIAL Thru-Hole Bulk 1M X 16 MASK PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
| MX23L3214XI-10 MX23L3214TI-90 |
32M-BIT MASK ROM 2M X 16 MASK PROM, 100 ns, PBGA48
32M-BIT MASK ROM 2M X 16 MASK PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| CAT28F001N-15TT CAT28F001P-70B CAT28F001N-15BT CAT |
128K X 8 FLASH 12V PROM, 150 ns, PDIP32
128K X 8 FLASH 12V PROM, 70 ns, PQCC32
128K X 8 FLASH 12V PROM, 70 ns, PDIP32 PLASTIC, DIP-32
x8 Flash EEPROM x8闪存EEPROM
1 Megabit CMOS Boot Block Flash Memory
|
Ironwood Electronics
Atmel, Corp.
Rectron Semiconductor
http://
|
| MX23L1610 MX23L1610MC-10 MX23L1610MC-12 MX23L1610M |
3.3 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM 1M X 16 MASK PROM, 150 ns, PDSO44
|
PROM
Macronix International Co., Ltd.
|
| MX23L6422 MX23L6422MC-11 MX23L6422MC-12 MX23L6422Y |
3.3 Volt 64M-BIT (4M x 16 / 2M x 32) Mask ROM with Page Mode 2M X 32 MASK PROM, 120 ns, PDSO86
|
Macronix International Co., Ltd.
|
| MX23L4100 MX23L4100MC-10 MX23L4100MC-12 MX23L4100M |
4M-BIT MASK ROM (8/16 BIT OUTPUT) 256K X 16 MASK PROM, 100 ns, PDSO40
4M-BIT MASK ROM (8/16 BIT OUTPUT) 256K X 16 MASK PROM, 120 ns, PDIP40
4M-BIT MASK ROM (8/16 BIT OUTPUT) 256K X 16 MASK PROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| AS29F010SOJ-150_883C AS29F010SOJ-150_IT AS29F010SO |
128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY
128K X 8 FLASH 5V PROM, 120 ns, PDSO32 SOJ-32
128K X 8 FLASH 5V PROM, 60 ns, PDSO32 SOJ-32
128K X 8 FLASH 5V PROM, 150 ns, PDSO32 SOJ-32
|
Austin Semiconductor, Inc
|
| GLS29EE010-70-4C-WHE GLS29EE010-70-4C-NHE-T SST29E |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PDSO32
128K X 8 FLASH 5V PROM, 70 ns, PDSO32
128K X 8 FLASH 5V PROM, 90 ns, PQCC32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
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