| PART |
Description |
Maker |
| HY5DU561622T HY5DU56822T |
16Mx16|2.5V|8K|K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的| /升| DDR SDRAM内存- 256M
32Mx8|2.5V|8K|K/H/L|DDR SDRAM - 256M 32Mx8 |.5V | 8K的| /升| DDR SDRAM内存- 256M
|
STMicroelectronics N.V.
|
| R3005250L |
Si Reverse, low current, 5 - 300MHz, 25.0dB typ. Gain @ 300MHz, 140mA max. @ 24VDC
|
PDI[PREMIER DEVICES, INC.]
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| EL5193ACS EL5193ACS-T13 EL5193ACS-T7 EL5193ACW-T7 |
Op Amp, 300MHz, Current Feedback Amplifier, Low Power
Op Amp, 300MHz, Current Feedback Amplifier, with Enable, Low Power
Single 300MHz Current Feedback Amplifier with Enable
Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:55; Connector Shell Size:16; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle; Body Style:Straight RoHS Compliant: No
|
INTERSIL[Intersil Corporation]
|
| K4X56163PI-FE K4X56163PI-FG |
16Mx16 Mobile DDR SDRAM
|
Samsung semiconductor
|
| K4X56163PI-LFE/GC3 K4X56163PI-LFE/GC6 |
16Mx16 Mobile DDR SDRAM
|
Samsung semiconductor
|
| IS43R16160D-6TL IS43R16160D-6TLI IS46R16160D-6TLA1 |
8Mx32, 16Mx16, 32Mx8 256Mb DDR SDRAM
|
Integrated Silicon Solution, Inc
|
| LT6402IUD-12 LT6402IUD-12-PBF LT6402IUD-12-TR LT64 |
300MHz Low Distortion, Low Noise Differential Amplifier
300MHz Low Distortion, Low Noise Differential Amplifi er/ ADC Driver (AV = 12dB)
|
Linear Technology
|
| M464S1654BT1 M464S1654BT1-C1H M464S1654BT1-C1L M46 |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung semiconductor
|
| NT128S64VH4A0GM0-7K |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD
|
NANYA
|
| M366S1654BTS |
16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung Electronic
|
