| PART |
Description |
Maker |
| CY7C1483V33-100BGC CY7C1483V33-117BGC CY7C1483V33- |
IC, SDRAM, 64M BIT, 512KX4X32 BIT,3.3V,10NS,100MHZ,TSOP-86
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 7.5 ns, PBGA209
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 7.5 ns, PBGA165
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 6.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 2M X 36 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 4M X 18 STANDARD SRAM, 8.5 ns, PQFP100
2M x 36/4M x 18/1M x 72 Flow-through SRAM 1M X 72 STANDARD SRAM, 5.5 ns, PBGA209
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| 74F212SCQR 74F212L1CQR 54F212L1MQB 54F212DMQB 74F2 |
16 X 9 STANDARD SRAM, 28 ns, PDSO20
16 X 9 STANDARD SRAM, 28 ns, CQCC20
16 X 9 STANDARD SRAM, 28 ns, CDIP20
16 X 9 STANDARD SRAM, 28 ns, PQCC20
|
FAIRCHILD SEMICONDUCTOR CORP
|
| WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K |
128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM（存取时7ns
128Kx8 3.3单片的SRAM28Kx83.3伏，单片静态随机存储器（存取时间为35ns））
128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32
128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32
128K X 8 STANDARD SRAM, 20 ns, CDFP32
|
White Electronic Designs Corporation
White Electronic Designs, Corp.
|
| P4C198-15JC P4C198-15JI P4C198-15JM P4C198-15JMB P |
ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS
16K X 4 STANDARD SRAM, 20 ns, PDSO24
16K X 4 STANDARD SRAM, 45 ns, CDIP24
16K X 4 STANDARD SRAM, 12 ns, PDSO24
16K X 4 STANDARD SRAM, 25 ns, CQCC28
|
Pyramid Semiconductor C...
Pyramid Semiconductor Corporation
|
| AS5C4009ECJ-85L_883C AS5C4009ECJ-85L_IT AS5C4009EC |
512K x 8 SRAM Ultra Low Power SRAM
512K X 8 STANDARD SRAM, 100 ns, CDIP32
512K X 8 STANDARD SRAM, 85 ns, CDSO32
512K X 8 STANDARD SRAM, 70 ns, CDSO32
512K X 8 STANDARD SRAM, 55 ns, CDSO32
|
MICROSS COMPONENTS
AUSTIN SEMICONDUCTOR INC
|
| CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器（为512k × 3600万18
CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
|
http://
Yuasa Battery, Inc.
Integrated Circuit Technology Corp
Microsemi, Corp.
Sony, Corp.
Sony Corporation
|
| EDI8810L120LM EDI8810L100DB EDI8810L150DI |
8K X 8 STANDARD SRAM, 120 ns, CQCC32
8K X 8 STANDARD SRAM, 100 ns, CDIP28
8K X 8 STANDARD SRAM, 150 ns, CDIP28
|
ELECTRONIC DESIGNS INC
|
| IDT7164S07 IDT7164LL25PG IDT7164LL25PGI IDT7164S20 |
8K X 8 STANDARD SRAM, 19 ns, PDSO28
8K X 8 STANDARD SRAM, 25 ns, PDIP28 0.600 INCH, PLASTIC, DIP-28
CMOS Static RAM 64K (8K x 8-Bit)
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
|
| UPD431000AGW-85LL-E2 UPD431000AGW-85L-E2 UPD431000 |
128K X 8 STANDARD SRAM, 85 ns, PDSO32 0.525 INCH, PLASTIC, SOP-32
128K X 8 STANDARD SRAM, 85 ns, PDSO32 0.525 INCH, LEAD FREE, PLASTIC, SOP-32
128K X 8 STANDARD SRAM, 100 ns, PDSO32
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K X 8 STANDARD SRAM, 120 ns, PDSO32
|
RCD Components, Inc.
|
| AT3864L-12PI AT3864L-12PC AT3864L-10RC |
8K X 8 STANDARD SRAM, 120 ns, PDIP28
8K X 8 STANDARD SRAM, 100 ns, PDSO28
|
ATMEL CORP
|
| FT61981-20DM FT61981L-12JC FT61982L-12PC |
16K X 4 STANDARD SRAM, 20 ns, CDIP28
16K X 4 STANDARD SRAM, 12 ns, PDSO28
16K X 4 STANDARD SRAM, 12 ns, PDIP28
|
FORCE TECHNOLOGIES LTD
|
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