| PART |
Description |
Maker |
| RJK03C5DPA |
Built in SBD N Channel Power MOS FET
|
Renesas
|
| RJK0206DPA-00-J5A RJK0206DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0236DPA RJK0236DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03R4DPA RJK03R4DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N4DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N6DPA |
30V, 40A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FMXB-2102 |
Fast Recovery Diode with built-in SBD for temperature detection
|
Sanken electric
|
| D4SBS4 |
Schottky Rectifiers (SBD) / SBD Bridges
|
Shindengen
|
| FQD20N06LE FQU20N06LE FQD20N06LETM |
60V N-Channel Logic level QFET (Built in ESD Protection Diode)
60V LOGIC N-Channel MOSFET 17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MCH5809 |
Nch SBD
N-Channel Silicon MOSFET DC / DC Converter Applications
|
Sanyo Semicon Device
|
