| PART |
Description |
Maker |
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32
Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes
IC DRIVER 1/2BRDG LOW SIDE 16DIP
DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
|
| AS6C4008-55STIN AS6C4008-55PCN AS6C4008-55SIN AS6C |
512K X 8 BIT LOW POWER 512K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
| LY6251216 |
512K X 16-Bit Low Power CMOS SRAM
|
Lyontek
|
| LY62W51316LL-55LLI LY62W51316LL-55LLIT |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62L51316LL-55I LY62L51316LL-55IT LY62L51316LL-55 |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| LY62L5128RL LY62L5128 LY62L5128E LY62L5128GL LY62L |
512K X 8 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| EM620FU16AS-70L EM620FU16AU-45L EM620FU16AU-70L EM |
512K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
http://
List of Unclassifed Manufacturers
Emerging Memory & Logic Solutions Inc
ETC
List of Unclassifed Manufac...
List of Unclassifed Man...
|
| DSK6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
Samsung semiconductor
|
| K6F4008U2E K6F4008U2E-EF55 K6F4008U2E-EF70 K6F4008 |
From old datasheet system
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C |
512Kx8 bit Low Power CMOS Static RAM
512K X 8 STANDARD SRAM, 70 ns, PDIP32
512K X 8 STANDARD SRAM, 55 ns, PDSO32
512K X 8 STANDARD SRAM, 70 ns, PDSO32
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
http://
|
