PART |
Description |
Maker |
HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU- |
256MB (32Mx64) PC2100 1-bank 512MB (64Mx72) PC2100 2-bank 512MB (64Mx64) PC2100 2-bank 512MB (64Mx72) PC1600 2-bank 256MB (32Mx72) PC1600 1-bank End-of-Life 512MB (64Mx64) PC1600 2-bank 12MB的(64Mx64)PC1600 2银行 256MB (32Mx72) PC2100 1-bank 56MB的(32Mx72)PC2100 1银行
|
Infineon Technologies AG
|
K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronics
|
WV3EG216M64STSU335D4NG |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
KBE00F005A-D411 KBE00F005A |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG[Samsung semiconductor]
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4H560838D-TC/LB0 K4H560838D-TC/LA2 K4H560838D-TC/ |
64M X 4 DDR DRAM, 0.7 ns, PDSO66 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP -40 to 125 256Mb 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PDIP 256Mb 10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC 256Mb 10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-SOIC -40 to 85 10-Bit, 400 kSPS ADC Serial Out, SPI/DSP Compatible I/F, Power Down, 8 Ch. 20-TSSOP -40 to 85
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
EM48AM1644VBB-8FE EM48AM1644VBC EM48AM1644VBC-75F |
256Mb (4M×4Bank×16) Synchronous DRAM 256Mb (4M隆驴4Bank隆驴16) Synchronous DRAM 256Mb (4M】4Bank】16) Synchronous DRAM
|
http:// Eorex Corporation
|
EM481M3244VBA-75FE EM481M3244VBA-7FE EM481M3244VBA |
256Mb (2M?4Bank?32) Synchronous DRAM 256Mb (2M麓4Bank麓32) Synchronous DRAM 256Mb (2M′4Bank′32) Synchronous DRAM
|
List of Unclassifed Man... Eorex Corporation ETC[ETC] List of Unclassifed Manufacturers http://
|
HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank 2.5 V 184-pin Registered DDR-I SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
HYS72D64320GBR-7-B HYS72D32300GBR-7-B HYS72D64300G |
DDR SDRAM Modules - 512 MB (64Mx72) PC2700; 2-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank, FBGA based DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx72) PC3200 1-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx72) PC2700 1-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank available 2Q/04 DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based DDR SDRAM Modules - 1GB (128Mx72) PC2700 2-bank, FBGA based DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank, FBGA based
|
Infineon
|
HY5V58BLF-H HY5V58BLF-S |
SDRAM - 256Mb
|
Hynix Semiconductor
|