| PART |
Description |
Maker |
| AS58C1001 |
Low power dissipation, active current
|
Micross Components
|
| BCP68 |
High current. Three current gain selections. 1.4 W total power dissipation.
|
TY Semiconductor Co., L...
|
| FCX690B |
2W power dissipation, 6A peak pulse current.
|
TY Semiconductor Co., Ltd
|
| FMMT723 |
625mW power dissipation, IC Up To 10A peak pulse current
|
TY Semiconductor Co., Ltd
|
| HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| 2SJ624 2SJ624-T1B 2SJ624-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:80V; Forward Current Avg Rectified, IF(AV):60mA; Forward Voltage Max, VF:1V; Vf Test Current:200mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:60mA MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| 2SB906 |
Low collector saturation voltage. High power dissipation.
|
TY Semiconductor Co., Ltd
|
| FCX717 |
2W power dissipation, Extremely low saturation voltage E.g. 12mv Typ
|
TY Semiconductor Co., Ltd
|
| FCX1151A |
2W power dissipation, Extremely low saturation voltage E.g. 60mv Typ.
|
TY Semiconductor Co., Ltd
|
| FZT549 |
Power Collector dissipation: PC=2W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|
| 2SD1620 |
Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted.
|
TY Semiconductor Co., Ltd
|
