| PART |
Description |
Maker |
| NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell
Renesas Electronics Corporation
|
| MGF7114C |
UHF BAND GaAs POWER AMPLIFIER
|
Mitsubishi
|
| MGF7170AC |
UHF BAND GaAs POWER AMPLIFIER
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| NJG1139UA2 |
UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| FLL2400IU-2C |
L-Band High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Fujitsu Limited
Sumitomo Electric Industries, Ltd.
|
| CF004_06 CF004 CF004-01 CF004-02 CF004-03 |
GaAs Pseudomorphic HEMT and MESFET Chips KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
Mimix Broadband, Inc.
MIMIX[Mimix Broadband]
|
| BLF2022-70 |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
UHF power LDMOS transistor
|
Philips Semiconductors
NXP Semiconductors
|
| FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET
L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| JDH2S01T |
UHF Band Mixer
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
| D1009UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
Seme LAB
|
