| PART |
Description |
Maker |
| 430P106X9100 430P394X9600 430P394X9400 430P394X920 |
Metalized Polyester Film Capacitors Wrap-and-Fill 金属化聚酯薄膜电容器总结和充
DC-DC Converter, 1Watt, Input VDC: 24, Output VDC: 24, Max Output Current(A): 0.042, Package: SIP4, Isolation(VDC): 3000, Operating Temp. -40C to 85C, Low Ripple & Noise, High Efficiency up to 80%, Low Profile Plastic Case, Single Output
CAP .012UF 16V PPS FILM 1206 5%
Metalized Polyester Film Capacitors Wrap-and-Fill
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
http://
|
| 430P106X9100 430P405X5100 430P405X5200 430P405X905 |
Metalized Polyester Film Capacitors Wrap-and-Fill
|
Vishay
|
| NSMX393100TRF NSMX563100TRF NSMX103100TRF NSMX1041 |
Wound Metalized PPS Film Capacitor Chips
|
NIC-Components Corp.
|
| 472MKP275KC 472MKP275KC13 683MKP275K 683MKP275KC 6 |
Small size ?Safety Agency approved ?Metalized Polypropylene
|
Illinois Capacitor, Inc.
Illinois Capacitor, Inc...
|
| F1260 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1209 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F2049 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1427 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F2013 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F2012 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F2004 F2002 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
