| PART |
Description |
Maker |
| KM23V4000D |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM) 4分位512Kx8）的CMOS掩模ROM分位512Kx8）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| MX29F004T MX29F004TPC-12 |
4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International
|
| K6X4008T1F K6X4008T1F-B K6X4008T1F-F K6X4008T1F-GB |
Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Aluminum; Series:165; Number of Contacts:12; Connecting Termination:Solder; Circular Shell Style:Cable Plug; Circular Contact Gender:Socket; Current Rating:7.5A 512Kx8位低功耗和低电压的CMOS静态RAM
PT05SE18-32S 512Kx8位低功耗和低电压的CMOS静态RAM
512Kx8 bit Low Power and Low Voltage CMOS Static RAM 512Kx8位低功耗和低电压的CMOS静态RAM
D38999/26WA98SN
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MX29F040TC-55 MX29F040TC-12 MX29F040QC-90 MX29F040 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29F040 MX29F040TC-70 MX29F040TC-70G MX29F040TI-9 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| 29F4000 MX29F400TTC-12 MX29F400TTC-90 |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY 256K X 16 FLASH 5V PROM, 120 ns, PDSO48
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| HT23C040 23C040 |
CMOS 512Kx8-Bit Mask ROM
From old datasheet system
CMOS 512K8-Bit Mask ROM
|
HOLTEK[Holtek Semiconductor Inc]
|
| MX29F040 MX29F040PC-55 MX29F040PC-70 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 55 ns, PDIP32
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32
|
Macronix International Co., Ltd.
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| AS6C8008 |
512K X 8 BIT LOW POWER 1024K X 8 BIT SUPER LOW POWER CMOS SRAM
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| TMP91PW12F |
Low-Voltage/Low Power CMOS 16-Bit Micro-controller
16-Bit Microcontroller TLCS-900 Family
|
Toshiba
|
