| PART |
Description |
Maker |
| SI8441DB-T2-E1 |
Trans MOSFET P-CH 20V 4.8A 6-Pin Micro Foot T/R
|
Vishay Siliconix
|
| SI7601DN-T1-GE3 |
Trans MOSFET P-CH 20V 11.5A 8-Pin PowerPAK 1212 T/R
|
Vishay Siliconix
|
| 2N5913 |
Trans GP BJT PNP 20V 0.05A
|
New Jersey Semiconductor
|
| IRLR3715 IRLU3715 IRLR3715TRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 54A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 54A条（丁）|52AA
SMPS MOSFET
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| EMH2604 |
Power MOSFET, 20V, 4A, 45mOhm, -20V, -3A, 85mOhm, Complementary Dual EMH8
|
ON Semiconductor
|
| ITF87068SQT |
9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P沟道2.5V专用功率MOS场效应管)
|
Intersil Corporation
|
| IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管）
N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|
| ITF87072DK8T FN4812 |
6A, 20V, 0.037 Ohm, Dual P-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.037Ω双组 P沟道2.5V专用功率MOS场效应管)
From old datasheet system
6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET
|
Intersil Corporation
|
| SIR414DP-T1-GE3 |
Trans MOSFET N-CH 40V 33A 8-Pin PowerPAK SO T/R
N-Channel 40-V (D-S) MOSFET
|
Vishay Siliconix
|
| SI7964DP SI7964DP-T1-E3 |
Dual N-Channel 60-V (D-S) MOSFET
Trans MOSFET N-CH 60V 6.1A 8-Pin PowerPAK SO T/R
|
Vishay Siliconix
|
| IR432DP-T1-GE3 SIR432DP |
Trans MOSFET N-CH 100V 8.6A 8-Pin PowerPAK SO T/R
N-Channel 100-V (D-S) MOSFET
|
Vishay Siliconix
|
