| PART |
Description |
Maker |
| HYS64T64020GDL-3.7-A HYS64T64020GDL-5-A HYS64T3200 |
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 4300 4-4-4 2Bank; available 3Q/04
DDR2 SDRAM Modules - 512MB (64Mx64) PC2 3200 3-3-3 2Bank; available 3Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 4300 4-4-4 1Bank; available 3Q/04
DDR2 SDRAM Modules - 256MB (32Mx64) PC2 3200 3-3-3 1Bank; available 3Q/04
|
Infineon
|
| EBE25UD6ABSA-4A-E EBE25UD6ABSA EBE25UD6ABSA-5C-E |
256MB DDR2 SDRAM SO-DIMM
|
Elpida Memory
|
| WV3HG64M32EEU403D4IMG WV3HG64M32EEU403D4ISG WV3HG6 |
256MB - 64Mx32 DDR2 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| MT48LC64M4A299 |
Synchronous DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| MT48LC64M4A203 |
SYNCHRONOUS DRAM 256Mb: x4, x8, x16 SDRAM
|
Micron Technology
|
| EBE25RC8AAFA-4C-E EBE25RC8AAFA-5C-E EBE25RC8AAFA-4 |
256MB Registered DDR2 SDRAM DIMM
256MB Registered DDR2 SDRAM DIMM
|
Elpida Memory
|
| K4T56083QF-GCD5 K4T56083QF-ZCD5 K4T56043QF-GCD5 K4 |
256Mb F-die DDR2 SDRAM
OSC 3.3V SMT 7X5 CMOS 256Mb的的F - DDR2内存芯片
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYB18T256161BF-20 HYB18T256161BF-25 HYB18T256161BF |
256-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
| HYS72T512122HFN-3.7-A HYS72T512022HFN-3.7-A |
240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM 512M X 72 DDR DRAM MODULE, PDMA240
|
Qimonda AG
|
| HYS72T512420EFA HYS72T512420EFA-25F-C HYS72T512420 |
240-Pin Fully-Buffered DDR2 SDRAM Modules DDR2 SDRAM RoHS Compliant Products
|
Qimonda AG
|
| EDE1104ABSE-5C-E EDE1108ABSE-5C-E EDE1116ABSE-5C-E |
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.6 ns, PBGA68
1G bits DDR2 SDRAM 64M X 16 DDR DRAM, 0.45 ns, PBGA92
1G bits DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1G bits DDR2 SDRAM 1克位DDR2 SDRAM内存
|
Elpida Memory, Inc.
|
