| PART |
Description |
Maker |
| 1N5223BT50R 1N5231BTR 1N5231BT26A 1N5231BT50A 1N52 |
surface mount silicon Zener diodes 6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
16V, 0.5W Zener Diode
33V, 0.5W Zener Diode
12V, 0.5W Zener Diode
13V, 0.5W Zener Diode
10V, 0.5W Zener Diode
25V, 0.5W Zener Diode
22V, 0.5W Zener Diode
30V, 0.5W Zener Diode
15V, 0.5W Zener Diode
27V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
11V, 0.5W Zener Diode
6.0V, 0.5W Zener Diode
4.7V, 0.5W Zener Diode
8.7V, 0.5W Zener Diode
6.2V, 0.5W Zener Diode
8.2V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
4.3V, 0.5W Zener Diode
3.9V, 0.5W Zener Diode
3.6V, 0.5W Zener Diode
2.4V, 0.5W Zener Diode
3.3V, 0.5W Zener Diode
5.6V, 0.5W Zener Diode
5.1V, 0.5W Zener Diode
2.7V, 0.5W Zener Diode
14V, 0.5W Zener Diode
18V, 0.5W Zener Diode
20V, 0.5W Zener Diode
24V, 0.5W Zener Diode
19V, 0.5W Zener Diode
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Fairchild Semiconductor, Corp.
|
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
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Toshiba Corporation
Toshiba Semiconductor
|
| HZ36L HZ6L HZ12C3L HZ7L HZ11L HZ12L HZ15L HZ16L HZ |
SWITCH TACT 6MM 100GF H=4.3MM
Silicon Epitaxial Planar Zener Diode for Low Noise Application
Diodes>Zener
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| CMS1006 CMS10 CMS10-06 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.8 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD
Switching Mode Power Supply Applications
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.5 to 14.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 13.8 to 14.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
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Toshiba Semiconductor
Toshiba Corporation
|
| H11G1SR2M H11G1SR2VM H11G1TM H11G1TVM H11G2M H11G1 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.8 to 4.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.9 to 4.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.1 to 4.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.2 to 4.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.4 to 4.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.0 to 4.2; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
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Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| MIC5219-3.1BM5 MIC5219-2.5BM5 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.8 to 6.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.7 to 6.0; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 5.8 to 6.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 3.1 V FIXED POSITIVE LDO REGULATOR, 0.6 V DROPOUT, PDSO5
|
Micrel Semiconductor,Inc.
Micrel Semiconductor, Inc.
MICREL INC
|
| 1M110ZS10 1M120ZS10 1M130ZS10 1M150ZS10 1M160ZS10 |
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.7 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.6 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 1% tolerance.
1.0 WATT SURMETIC 30 SILICON ZENER DIODES
4 PR #24 DATATWIST PVC
1701A CMP 4BP24 BK 1000F REELEX
1701A CMP 4BP24 GY 1000F SP 1.0瓦SURMETIC 30硅稳压二极管
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 130 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 110 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 200 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 150 V. 2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 180 V. 1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.3 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.6 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -5% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 3.9 V. -1% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.3 V. -2% tolerance.
1.0 watt Surmetic 30 silicon zener diode. Nom zener voltage 4.7 V. -2% tolerance.
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MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| DF2S5.6FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 10.44 to 11.56; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
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Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A8.2FV |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 产品使用，但对静电放电（ESD保护
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.50 to 2.75; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
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Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
