PART |
Description |
Maker |
V53C16129H |
HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp
|
EM23C1000 |
High Performance 128K ? 8 CMOS ROM(楂???奖M浣??128K ? 8锛?MOS ROM)
|
ELAN Microelctronics Corp .
|
28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32 150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32 Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes CONNECTOR ACCESSORY Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http:// Maxwell Technologies, Inc
|
HT23C010 23C010 |
From old datasheet system CMOS 128K x 8-Bit Mask ROM(CMOS 128K x 8位掩模式ROM) 的CMOS 128K的8位掩模ROM28K的的CMOS × 8位掩模式光盘 CMOS 128K 8-Bit Mask ROM CMOS 128K? 8-Bit Mask ROM CMOS 128K′ 8-Bit Mask ROM
|
Holtek Semiconductor, Inc. HOLTEK[Holtek Semiconductor Inc]
|
FM27C512Q FM27C512N90 FM27C512V120 FM27C512V150 FM |
512K-Bit (64K x 8) High Performance CMOS EPROM 524,288-Bit (64K x 8) High Performance CMOS EPROM 524/288-Bit (64K x 8) High Performance CMOS EPROM Capacitors.. 100 PIECE MIN.. NC/NR
|
FAIRCHILD[Fairchild Semiconductor] PROM
|
MX29F001TTC-90 MX29F001TTC-70 MX29F001TTC-12 MX29F |
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDIP32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDSO32 x8 Flash EEPROM x8闪存EEPROM
|
Macronix International Co., Ltd.
|
NM27C040 NM27C040Q150NBSP NM27C040Q150 27C040 NM27 |
4,194,304 Bit (512K x 8) High Performance CMOS EPROM 4194304-Bit (512K x 8) High Performance CMOS EPROM 4,194,304-Bit (512K x 8) High Performance CMOS EPROM 4 /194 /304-Bit (512K x 8) High Performance CMOS EPROM IC-4MB CMOS OTP PROM
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
CY27H010-30ZC CY27H010-35JC CY27H010-35WMB CY27H01 |
128K x 8 High-Speed CMOS EPROM 128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PQCC32 128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 35 ns, PDSO32 128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PDIP32 128K x 8 High-Speed CMOS EPROM 128K X 8 OTPROM, 30 ns, PQCC32 From old datasheet system
|
Cypress Semiconductor, Corp. Atmel, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
CXK5T81000ATM/AYM/AM-12LLX CXK5T81000ATM/AYM/AM-10 |
128K X 8 STANDARD SRAM, 120 ns, PDSO32 128K X 8 STANDARD SRAM, 100 ns, PDSO32 131072-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
KM681002C KM681002C-10 KM681002C-12 KM681002C-15 K |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAM5V工作。在经营商业和工业温度范围 128K X 8 STANDARD SRAM, 20 ns, PDSO32 128K X 8 STANDARD SRAM, 10 ns, PDSO32
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|