PART |
Description |
Maker |
ACS758LCB-100B-PFF-T ACS758LCB-050B-PFF-T ACS758EC |
Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 μΩ Current Conductor Thermally Enhanced, Fully Integrated, Hall Effect-Based Linear Current Sensor IC with 100 楼矛楼? Current Conductor
|
Allegro MicroSystems
|
STW9C2SA |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
PTFB181702FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXAC182002FC PXAC182002FC-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
PTAB182002FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFA181001GL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
PTFB090901FAV2R0 PTFB090901FAV2R250XTMA1 PTFB09090 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
PTFA260851E PTFA260851F |
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 鈥?2700 MHz
|
Infineon Technologies AG
|
PTF240101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
|
Infineon Technologies AG
|
PTFA092213EL PTFA092213FL |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz
|
Infineon Technologies AG
|