PART |
Description |
Maker |
NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
|
VP0300LS VP0300L VQ2001P VQ2001J 70217 |
P-Channel Enhancement-Mode MOSFET Transistor(最小漏源击穿电30V,夹断电0.6A的P沟道增强型MOSFET) From old datasheet system P-Channel Enhancement-Mode MOSFET Transistors
|
Vishay Intertechnology,Inc.
|
APM3095PUC-TU APM3095PUC-TUL APM3095PUC-TRL |
P-Channel Enhancement Mode MOSFET 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics Corporation Anpec Electronics, Corp.
|
TZ404CY TZ404 TZ404BD |
20 V, 8 ohm, N-channel enhancement-mode D-MOS FET N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH
|
Topaz Semiconductor ETC[ETC] List of Unclassifed Manufacturers
|
ARF475LF ARF475FL |
N-CHANNEL ENHANCEMENT MODE POWER MOSFETs From old datasheet system RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE
|
ADPOW Advanced Power Technology
|
IXTH40N30NBSP IXTH40N30 IXTM40N30 |
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET) N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.085Ω的N沟道增强B>MegaMOSFET) From old datasheet system N-Channel Enhancement MOSFET
|
IXYS Corporation
|
APM2317AC-TRL |
P-Channel Enhancement Mode MOSFET 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics, Corp.
|
APM9968C APM9968COC-TR |
20 V, N-channel enhancement mode MOSFET N-Channel Enhancement Mode MOSFET N沟道增强型MOS From old datasheet system
|
Anpec Electronics, Corp. ANPEC[Anpec Electronics Coropration] ANPEC Electronics Corporation
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|