| PART |
Description |
Maker |
| BSS84DW2 BSS84DW-7-F |
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 130 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Incorporated
Diodes, Inc.
|
| ISL5761EVAL1 ISL5761IA ISL57612IB ISL5761IB ISL576 |
10-bit/ 3.3V/ 130/210MSPS/ CommLink TM High Speed D/A Converter
CONNECTOR ACCESSORY
10-bit, 3.3V, 130/210MSPS, CommLink TM High Speed D/A Converter PARALLEL, WORD INPUT LOADING, 0.035 us SETTLING TIME, 10-BIT DAC, PDSO28
10-bit, 3.3V, 130/210MSPS, CommLink TM High Speed D/A Converter 10位，3.3伏，130/210MSPSCommLink商标高速D / A转换
10-bit, 3.3V, 130/210MSPS, CommLink TM High Speed D/A Converter
|
Intersil Corporation
Intersil, Corp.
|
| FSJ9260R4 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FS |
27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 27 A, 200 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| ISL58292IN ISL5829EVAL1 ISL5829IN |
Dual 12-bit, 3.3V, 130/210MSPS, CommLink TM High Speed D/A Converter
Dual 12-bit/ 3.3V/ 130/210MSPS/ CommLink TM High Speed D/A Converter
210MHz; 3.6V; 24mA; dual 12-bit, 3.3V, 130/210 MSPS, commLink high speed D/A converter. For quadrature transmit with IF range 0-80MHz, medical/test instrumentation and equipment, wireless communication systems, BWA infrastructure
|
http://
Intersil Corporation
|
| STE139N65M5 |
N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh(TM) V Power MOSFET in ISOTOP package
|
ST Microelectronics
|
| NTMFS4834N NTMFS4834NT3G NTMFS4834NT1G |
-48 V Telecom Power Conversion Solution 13 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 30 V, 130 A, Single N−Channel, SO−8FL
|
ON Semiconductor
|
| PHA3135-130M |
Computers; Leaded Process Compatible:Yes RoHS Compliant: Yes RadarPulsedPowerModule15，，13014500msPulse 3.1 - 3.5吉赫
RadarPulsedPowerModule/ 115/ 130/145W/100msPulse 3.1 - 3.5 GHz
RadarPulsedPowerModule 115 130145W100msPulse 3.1 - 3.5 GHz
RadarPulsedPowerModule, 115, 130,145W,100msPulse 3.1 - 3.5 GHz
|
MACOM[Tyco Electronics]
|
| BLF7G22LS-130 |
Power LDMOS transistor BLF7G22LS-130<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF7G22LS-130<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
| APT6013B2LL APT6013LLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS V 600V 43A 0.130 Ohm
|
Advanced Power Technology
|
| 55883-0490 0558830490 |
3.30mm (.130
|
Molex Electronics Ltd.
|
| CM520813 |
SCR/Diode POW-R-BLOK Modules 130 Amperes/800 Volts
SCR/Diode POW-R-BLOK⑩ Modules 130 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| AQV210EAX AQV210EHAX AQV214EAX |
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: reinforced 5,000 VAC. Output rating: load voltage 350V, load current 130 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
PhotoMOS relay, GU (general use) E-type, 1-channel (form A ) type. I/O isolation: standard 1,500 VAC. Output rating: load voltage 400V, load current 120 mA. Tape and reel packing style, picked from the 1/2/3-pin side.
|
Matsushita Electric Works(Nais)
|
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