PART |
Description |
Maker |
TS2GMP650 |
2GB/4GB/8G USB Flash Drive
|
Transcend Information. Inc.
|
K524G2GACB-A050 |
4Gb NAND Flash 2Gb Mobile DDR
|
Samsung semiconductor
|
NAND01G-M NAND256-M NAND256R3M0 NAND256R3M0AZB5E N |
SPECIALTY MEMORY CIRCUIT, PBGA149 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
|
NUMONYX STMICROELECTRONICS[STMicroelectronics]
|
MT8VDDT3264AG-40BC4 |
256MB, 512MB (x64, SR) 184-Pin DDR SDRAM UDIMM
|
Micron Technology
|
K521F12ACD-B060 |
1Gb (128M x8) NAND Flash 512Mb (32M x16) Mobile DDR SDRAM
|
Samsung
|
TS4GJF300 |
4GB USB2.0 JetFlash垄莽300 4GB USB2.0 JetFlash?300
|
Transcend Information. Inc.
|
W3EG72125S335AJD3 W3EG72125S202JD3 W3EG72125S263AJ |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Amphenol, Corp. Toshiba, Corp.
|
TS4GJF220 |
4GB USB2.0 JetFlash垄芒220 4GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|
W3HG2128M72ACER-AD6 W3HG2128M72ACER403AD6XG |
2GB - 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL, VLP 2GB 2x128Mx72 DDR2 SDRAM的注册,瓦特/锁相环,葡萄多糖
|
Optrex America, Inc. 3M Company
|
HYS72D256520GR-7-A HYS72D256520GR-8-A |
2GB (256Mx72) PC1600 2-bank available 3Q02 DDR SDRAM Modules - 2GB (256Mx72) PC2100 2-bank
|
Infineon
|
WV3EG128M72EFSR335D3SG |
1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL, FBGA 1GB 128Mx72 DDR SDRAM的注册瓦锁相环,FBGA封装
|
Electronic Theatre Controls, Inc.
|
TS2GJF220 |
2GB USB2.0 JetFlash垄芒220 2GB USB2.0 JetFlash?20
|
Transcend Information. Inc.
|