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R1QKA3618CB - 36-Mbit DDRII SRAM 2-word Burst

R1QKA3618CB_7016615.PDF Datasheet


Part No.	R1QKA3618CB R1QKA3636CB R1QEA3636CB R1QEA3636CBG R1QEA3618CBG R1QDA3618CB R1QDA3636CB R1QLA3636CB R1QLA3618CB R1QBA3618CB R1QBA3618CBG R1QGA3618CB
Description	36-Mbit DDRII SRAM 2-word Burst
File Size	307.29K / 38 Page
Maker	Renesas Electronics Corporation
Homepage	http://www.renesas.com
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Full text search : 36-Mbit DDRII SRAM 2-word Burst

Related Part Number

PART	Description	Maker
R1QKA3618CB R1QKA3636CB R1QEA3636CB R1QEA3636CBG R	36-Mbit DDRII SRAM 2-word Burst	Renesas Electronics Corporation
R1Q5A3618B R1Q5A3618BBG-33R R1Q5A3618BBG-40R R1Q5A	36-Mbit DDRII SRAM 4-word Burst	Renesas Electronics Corporation
CAT64LC40ZJ CAT64LC40ZS CAT64LC40J-TE7 CAT64LC40J-	72-Mbit QDR™-II SRAM 2-Word Burst Architecture 72-Mbit QDR™-II SRAM 4-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL™ Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture SPI Serial EEPROM SPI串行EEPROM 72-Mbit QDR-II SRAM 2-Word Burst Architecture SPI串行EEPROM 72-Mbit QDR-II SRAM 2-Word Burst Architecture	Analog Devices, Inc.
UPD44164364F5-E60-EQ1 UPD44164084 UPD44164084F5-E4	18M-BIT DDRII SRAM 4-WORD BURST OPERATION	NEC[NEC]
UPD44324364F5-E50-EQ2 UPD44324084 UPD44324084F5-E3	36M-BIT DDRII SRAM 4-WORD BURST OPERAT	NEC[NEC]
CY7C1515KV18-250BZXI CY7C1515KV18-300BZC CY7C1515K	72-Mbit QDR II SRAM 4-Word Burst Architecture 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165	http:// Cypress Semiconductor, Corp.
CY7C1165V18 CY7C1163V18 CY7C1161V18 CY7C1176V18 CY	18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165 18-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18兆位的国防评估报告⑩- II SRAM字突发架构（2.5周期读写延迟 18-Mbit QDR??II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)	Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP-	Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 4-word Burst	Renesas Technology / Hitachi Semiconductor
HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H	Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 2-word Burst	Renesas Technology / Hitachi Semiconductor
HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP	Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 2-word Burst	Renesas Technology / Hitachi Semiconductor
CY7C1515V18-250BZC CY7C1526V18 CY7C1526V18-167BZC	72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture 72-Mbit QDR⑩-II SRAM 4-Word Burst Architecture 72-Mbit QDR?II SRAM 4-Word Burst Architecture	CYPRESS[Cypress Semiconductor]

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