| PART |
Description |
Maker |
| 2N4401 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| RTC6691 |
silicon-germanium (SiGe) power amplifier
|
RichWave
|
| NTE103ANPN |
Germanium Complementary Transistors Medium Power Amplifier
|
NTE
|
| NTE226 |
Germanium PNP Transistor Audio Power Amp
|
NTE[NTE Electronics]
|
| NTE102 |
Germanium Complementary Transistors Power Output, Driver
|
NTE[NTE Electronics]
|
| NTE104 |
Germanium PNP Transistor Audio Frequency Power Amplifier
|
NTE[NTE Electronics]
|
| UPC3236TK-E2 UPC3236TK-E2-A UPC3236TK |
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
| UPC3225TB-E3 UPC3225TB-E3-A |
5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER
|
NEC
|
| 1N3110 1N949 1N3287 1N3287WUSN 1N3125 1N3146 1N994 |
8 V, 500 mA, gold bonded germanium diode
40 V, 500 mA, gold bonded germanium diode
6 V, 200 mA, gold bonded germanium diode
GOLD BONDED DIODES
6 V, 500 mA, gold bonded germanium diode
25 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
15 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| 1N34A |
GERMANIUM DIODE 0.05 A, 75 V, GERMANIUM, SIGNAL DIODE, DO-7
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| BGA61208 |
Silicon Germanium Broadband MMIC Amplifier
0 MHz - 2800 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Infineon Technologies AG
|
