PART |
Description |
Maker |
APT10078BFLL_06 APT10078BFLL APT10078BFLL06 APT100 |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3 14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN 22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN 1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET 31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp. MICROSEMI CORP
|
2SJ278MYTR-E 2SJ278 2SJ278MYTL-E |
1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6D package 400V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6E package 1000V Dual N-Channel MOSFET in a S-6E package SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6 400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier Electronic Theatre Controls, Inc. Atmel, Corp.
|
SML1001R1AN SML1001R3AN SML901R3AN SML901R1AN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
IXGD8N100-2L |
1000 V, N-CHANNEL IGBT
|
IXYS CORP
|
SNG21034 |
34 A, 1000 V, N-CHANNEL IGBT, TO-254AA
|
MICROSEMI CORP
|
SKM191 |
28 A, 1000 V, 0.37 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SEMIKRON INTERNATIONAL
|
MIC94031BM4 MIC94030BM4 |
1000 mA, 13.5 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
SANDISK CORP
|
MCH3301 |
1000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
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KAI-1020-CBA-FD-BA |
IMAGE SENSOR-CCD, 1000(H) X 1000(V) PIXEL, 500mV, SQUARE, THROUGH HOLE MOUNT
|
KODAK IMAGE SENSOR SOLUTIONS
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