PART |
Description |
Maker |
KO3416 |
VDS (V) = 20V ID = 6.5 A RDS(ON) 22mΩ (VGS = 4.5V) RDS(ON) 26mΩ (VGS = 2.5V)
|
TY Semiconductor Co., Ltd
|
KDB5690 |
32 A, 60 V. RDS(ON) = 0.027 VGS = 10 V RDS(ON) = 0.032 VGS = 6 V
|
TY Semiconductor Co., L...
|
FDN5630 |
N-Channel Power Trench MOSFET VDS (V) = 60V RDS(ON)100 m (VGS = 10V) Optimized for use in high frequency DC/DC converters
|
TY Semicondutor TY Semiconductor Co., Ltd
|
2SK3367 |
Low on-resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 18 A)
|
TY Semiconductor Co., Ltd
|
KQB630 |
9A, 200 V. RDS(ON) = 0.4 VGS = 10 V Low gate charge (typical 19nC)
|
TY Semiconductor Co., Ltd
|
KDB6030L |
52A, 30 V. RDS(ON) = 0.0135 VGS = 10 V Low gate charge (typical 34 nC).
|
TY Semiconductor Co., Ltd
|
2SK3109 |
Gate voltage rating -30 V Low on-state resistance RDS(on) = 0.4 MAX. (VGS= 10 V, ID = 5.0 A)
|
TY Semiconductor Co., Ltd
|
SI4410DY |
RDS(ON) 0.0135 VGS=10V Low gate charge. Fast switching speed.
|
TY Semiconductor Co., Ltd
|
2SK2111 |
N-Channel MOSFET Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
|
TY Semicondutor TY Semiconductor Co., Ltd
|
KXU05N25 |
VDS (V) = 250V RDS(ON) 1 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
ST95P08 ST95P08B1TR ST95P08B3TR ST95P08B6TR ST95P0 |
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:3A; Resistance, Rds on:0.05R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:3.0A; Current, Idm pulse:12A; Marking, SMD:M5; Pins, No. RoHS Compliant: Yes 8 Kbit Serial SPI EEPROM with Positive Clock Strobe
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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