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KDD3670 - 34 A, 100 V. RDS( = 32m VGS = 10 V High power and current handling capability

KDD3670_7100588.PDF Datasheet


 Full text search : 34 A, 100 V. RDS( = 32m VGS = 10 V High power and current handling capability
 Product Description search : 34 A, 100 V. RDS( = 32m VGS = 10 V High power and current handling capability


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KO3416 VDS (V) = 20V ID = 6.5 A RDS(ON) 22mΩ (VGS = 4.5V) RDS(ON) 26mΩ (VGS = 2.5V)
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KDB5690 32 A, 60 V. RDS(ON) = 0.027 VGS = 10 V RDS(ON) = 0.032 VGS = 6 V
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FDN5630 N-Channel Power Trench MOSFET
VDS (V) = 60V RDS(ON)100 m (VGS = 10V) Optimized for use in high frequency DC/DC converters
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2SK3367 Low on-resistance RDS(on)1 = 9.0 m MAX. (VGS = 10 V, ID = 18 A)
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KQB630 9A, 200 V. RDS(ON) = 0.4 VGS = 10 V Low gate charge (typical 19nC)
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KDB6030L 52A, 30 V. RDS(ON) = 0.0135 VGS = 10 V Low gate charge (typical 34 nC).
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SI4410DY RDS(ON) 0.0135 VGS=10V Low gate charge. Fast switching speed.
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2SK2111 N-Channel MOSFET
Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
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KXU05N25 VDS (V) = 250V RDS(ON) 1 (VGS = 10V) Drain-Source Voltage VDSS 250 V
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ST95P08 ST95P08B1TR ST95P08B3TR ST95P08B6TR ST95P0 MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:3A; Resistance, Rds on:0.05R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:3.0A; Current, Idm pulse:12A; Marking, SMD:M5; Pins, No. RoHS Compliant: Yes
8 Kbit Serial SPI EEPROM with Positive Clock Strobe
意法半导
STMICROELECTRONICS[STMicroelectronics]
 
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