| PART |
Description |
Maker |
| UPD44324092BF5-E33-FQ1 UPD44324182BF5-E33-FQ1 PD44 |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
2M X 18 DDR SRAM, 0.45 ns, PBGA165
36M-BIT DDR II SRAM 2-WORD BURST OPERATION
|
Renesas Electronics Corporation
|
| UPD44164362F5-E60-EQ1 UPD44164082 UPD44164082F5-E4 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44165082F5-E60-EQ1 UPD44165182F5-E60-EQ1 UPD441 |
18M-BIT QDRII SRAM 2-WORD BURST OPERATION 1800万位推出QDRII SRAM字爆发运
|
NEC Corp.
NEC, Corp.
|
| CY7C1550KV18-450BZC CY7C1550KV18-400BZC CY7C1548KV |
Sync SRAM; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
| GS8182S18GD-167I |
18Mb Burst of 2 DDR SigmaSIO-II SRAM 1M X 18 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8662S36GE-250I |
72Mb Burst of 2 DDR SigmaSIO-II SRAM 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
| GS8662T09E-333 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
| CY7C1423JV18-250BZXC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture; Architecture: DDR-II SIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| AD7225 AD7225LN AD7225LR AD7225LP AD7225KN AD7225K |
ECONOLINE: REC2.2-S_DR/H1 - 2.2W DIP Package- 1kVDC Isolation- Regulated Output- UL94V-0 Package Material- Continuous Short Circiut Protection
LC2MOS Quad 8-Bit DAC with Separate Reference Inputs PARALLEL, 8 BITS INPUT LOADING, 5 us SETTLING TIME, 8-BIT DAC, PDIP24
LC2MOS Quad 8-Bit DAC with Separate Reference Inputs PARALLEL, 8 BITS INPUT LOADING, 8-BIT DAC, PQCC28
LC2MOS Quad 8-Bit DAC with Separate Reference Inputs PARALLEL, 8 BITS INPUT LOADING, 8-BIT DAC, PDSO24
|
Analog Devices, Inc.
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
