PART |
Description |
Maker |
RJK60S2DPP-E0 RJK60S2DPP-E0-T2 |
600V - 8A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6035DPP-E0 RJK6035DPP-E0-15 |
600V - 6A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6002DJE-00Z0 RJK6002DJE-15 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6012DPP-E0 |
600V - 10A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJQ6020DPM |
600V - 20A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJL6015DPK-15 |
600V - 19A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK0855DPB RJK0855DPB-15 |
80V, 30A, 11 m max. Silicon N Channel Power MOS FET Power Switching 80V, 30A, 11 m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK0654DPB-00-J5 RJK0654DPB-15 |
60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching 60V, 30A, 8.3m?nax. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
FGW30N60VD |
Discrete IGBT (High-Speed V series) 600V / 30A
|
Fuji Electric
|
2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH From old datasheet system
|
NEC[NEC]
|