| PART |
Description |
Maker |
| 35SCGQ060SCS |
35A 60V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package
|
International Rectifier
|
| SBT350-06J |
Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 60V, 35A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 60V, 35A Rectifier
|
Sanyo Semicon Device
|
| 1N2128ASERIES 1N3768 1N1183 1N1183A 1N1184 1N1184A |
35,40,and 60 Amp Power Silicon Rectifier Diodes
35,43 AND POWER SILICON RECTIFIER DIODES
150V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
400V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
400V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
200V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
300V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
150V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
300V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
500V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
600V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
100V 40A Std. Recovery Diode in a DO-203AB (DO-5)package
300V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
500V 35A Std. Recovery Diode in a DO-203AB (DO-5)package
100V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
500V 60A Std. Recovery Diode in a DO-203AB (DO-5)package
|
IRF[International Rectifier]
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling
Schottky Diodes - Low barrier silicon RF Schottky diode for detectors
Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|
| NTLJF3118N NTLJF3118NTAG NTLJF3118NTBG |
Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
|
ON Semiconductor
|
| BAT60A Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管（肖特基二极管整流极端VF为移动通信电源供应下降
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HFB35HB20C |
200V 35A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-254AA package
Ultrafast, Soft Recovery Diode
|
IRF[International Rectifier]
|
| HUF75321S3S FN4360 HUF75321P3 |
35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs(35A, 55V, 0.034 Ω, N沟道UltraFET功率MOS场效应管)
From old datasheet system
35A/ 55V/ 0.034 Ohm/ N-Channel UltraFET Power MOSFETs
|
Intersil Corporation
|
| IRF7524D1 |
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
FETKY⑩ MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
HEXFET? Power MOSFET
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.27ohm, Schottky Vf=0.39V)
|
IRF[International Rectifier]
|
| PF3500 PF3502 PF3501 PF3500-14 |
35A 1/2?PRESS-FIT DIODE
|
Won-Top Electronics
|
