| PART |
Description |
Maker |
| AD632BH AD632 |
Internally Trimmed Precision IC Multiplier
|
Analog Devices
|
| AD517K AD517 AD517S AD517SH AD517J AD517LH AD517JH |
Low Cost / Laser Trimmed / Precision IC Op Amp
Low Cost, Laser Trimmed, Precision IC Op Amp
|
AD[Analog Devices]
|
| THAT2180A THAT2180C THAT2180B |
Pre-Trimmed IC Voltage Controlled Amplifiers
|
List of Unclassifed Manufacturers
ETC
N.A.
|
| AD562SD AD562KD AD562 AD562AD |
LASER TRIMMED HIGH-SPEED 12-BIT CONVERTER
|
Motorola, Inc
|
| SP3843 |
Trimmed Oscillator Discharge Current for Precise Duty Cycle Control
|
TY Semiconductor Co., Ltd
|
| BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS)
Triacs Silicon Bidirectional Thyristors
600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
| MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| AGB3311 AGB3311S24Q1 AGB3311_REV_1.0 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block
50з High Linearity Low Noise Internally Biased Wideband Gain Block
From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
| ISL21060BFH620Z-TK ISL21060BFH625Z-TK ISL21060BFH6 |
Precision Reference with Disable
Precision, Low Noise FGA Voltage References
|
Intersil Corporation
|
| MGFC26V5964A MGFC36V5964A MGFC36V59964A |
5.9-6.4 GHz BAND 4W Internally Matched GaAs FET
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
5.9-6.4GHz band 4W internally matched GaAs FET
|
Mitsubishi Electric Corporation
|
