| PART |
Description |
Maker |
| 1N347 1N256 1N2029 1N2370 1N1342B 1N338 |
1 A, 100 V, SILICON, SIGNAL DIODE
1 A, 600 V, SILICON, SIGNAL DIODE
1 A, 400 V, SILICON, SIGNAL DIODE
1 A, 2000 V, SILICON, SIGNAL DIODE
6 A, 100 V, SILICON, RECTIFIER DIODE
|
|
| RL153G-F 1N4007GH05 1N4007GH03-2 1N4005GH08 |
1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
|
RECTRON LTD
|
| CMR1U-06MBK |
1 A, 600 V, SILICON, SIGNAL DIODE
|
CENTRAL SEMICONDUCTOR CORP
|
| MRA4005T3 |
1 A, 600 V, SILICON, SIGNAL DIODE
|
MOTOROLA INC
|
| JANS2N2906A JAN2N2907A JANTX2N2907A JANTX2N2907AL |
PNP SMALL SIGNAL SILICON TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
64 x 18 asynchronous FIFO memory 56-SSOP 0 to 70 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1N6661 1N6663 JAN1N6663 JANTXV1N6663 JANTX1N6663 1 |
VOIDLESS-HERMETICALLY-SEALED STANDARD RECOVERY GLASS RECTIFIERS
Signal or Computer Diode; Package: B; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 600; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi Corporation
Microsemi, Corp.
|
| GPP10J-E3 |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
|
VISHAY SEMICONDUCTORS
|
| ER1J-LTP |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA
|
MICRO COMMERCIAL COMPONENTS
|
| HSM106 HSM101 HSM102 HSM103 HSM104 HSM105 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere) 1 A, 50 V, SILICON, SIGNAL DIODE
|
RECTRON[Rectron Semiconductor]
|
| SF10JG |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 PLASTIC PACKAGE-2
|
Vishay Beyschlag
|
| 1N3613GPE |
1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL PLASTIC, DO-41, 2 PIN
|
Vishay Beyschlag
|
| GL34A08 GL34J-TP |
0.5 Amp Standard Recovery Rectifier 50 to 1000 Volts
0.5 A, 600 V, SILICON, SIGNAL DIODE
|
Micro Commercial Components
|
|
