| PART |
Description |
Maker |
| 2SA1415 |
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semiconductor Co., Ltd
|
| 2SA1730 |
Adoption of FBET , MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SD1621 |
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage.
|
TY Semiconductor Co., Ltd
|
| 2SA1813 |
Very small-sized package. Adoption of FBET process. High DC current gain (hFE=500 to 1200).
|
TY Semiconductor Co., Ltd
|
| 2SC4601 |
Surface mount type device making the following possible. Adoption of MBIT process.
|
TY Semiconductor Co., Ltd
|
| VPH01 |
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For High-Definition TV
FBET Hybrid IC Video Pack (VPH Series) Video Output Amplifiers For Extended-Definition TV Projections
|
SANYO[Sanyo Semicon Device]
|
| SST39LF400A SST39LF200A |
(SST39xF200A/400A/800A) 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Silicon Storage Technology
|
| SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
| VS28F016SV MS28F016SV |
16-Mbit (1-Mbit x 16/ 2-Mbit x 8) FlashFileTM MEMORY
16-Mbit FlashFileTM MEMORY
16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY 16兆位兆位× 16兆位× 8FlashFileTM记忆
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
