| PART |
Description |
Maker |
| 2SK210 2SK210-BL |
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications
|
TOSHIBA
|
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| ENA1108 15GN03MA |
NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Sanyo Semicon Device
|
| EC3H01B |
VHF Band Low-Noise Amplifer and OSC Applications 甚高频波段低噪声放大器和OSC应用
NPN Epitaxial Planar Silicon Transistor VHF Band Low-Noise Amplifer and OSC Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| Q62702-F1055 BF997 |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BB204B BB204 BB204G |
ER 35C 35#16 PIN PLUG VHF BAND, 14 pF, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
VHF variable capacitance double diodes 甚高频双可变电容二极
|
PHILIPS[Philips Semiconductors]
Philipss
NXP Semiconductors N.V.
|
| MA2S304 |
Silicon epitaxial planar type VHF BAND, 27.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2S367 |
Silicon epitaxial planar type VHF-UHF BAND, 13.25 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC[Panasonic Semiconductor]
|
| BAT68-04E6433 |
SILICON, VHF-UHF BAND, MIXER DIODE
|
INFINEON TECHNOLOGIES AG
|
| KV1735R |
VHF BAND, 73.3 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ASAHI KASEI POWER DEVICES CORP
|
| BB515E6433 |
VHF-UHF BAND, 18.7 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
SIEMENS A G
|
