| PART |
Description |
Maker |
| EDE2516AASE-AE-E EDE2516AASE-DF-E |
16M X 16 DDR DRAM, 0.5 ns, PBGA84
16M X 16 DDR DRAM, 0.45 ns, PBGA84
|
ELPIDA MEMORY INC
|
| MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66
16M X 16 DDR DRAM, 0.7 ns, PBGA60
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| HYB25D256160BF-7 HYB25D256160BEL-7F |
16M X 16 DDR DRAM, 0.75 ns, PBGA60
16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
INFINEON TECHNOLOGIES AG
|
| H5PS1G63EFR-C4I H5PS1G63EFR-S5C |
64M X 16 DDR DRAM, 0.5 ns, PBGA84
64M X 16 DDR DRAM, 0.4 ns, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
| IS43DR16640A-3DBLI |
64M X 16 DDR DRAM, 0.45 ns, PBGA84
|
INTEGRATED SILICON SOLUTION INC
|
| MT47H64M4BG-37E |
64M X 4 DDR DRAM, 0.5 ns, PBGA84
|
|
| E5116ABSE-4C-E |
32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
ELPIDA MEMORY INC
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EDE1116AEBG-8E-F EDE1116AEBG-6E-F EDE1108AEBG-6E-F |
64M X 16 DDR DRAM, 0.45 ns, PBGA84
1G bits DDR2 SDRAM
|
ELPIDA MEMORY INC
|
| HYB18T512161B2F-20 |
32M X 16 DDR DRAM, 0.45 ns, PBGA84 ROHS COMPLIANT, PLASTIC, TFBGA-84
|
Qimonda AG
|
| HY5DU561622ELTP-L |
16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| NT5DS16M16BS-6KL |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
|
NANYA TECHNOLOGY CORP
|
|
