| PART |
Description |
Maker |
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2N3375 2N33752N3632_2N3733 RF25 2N3733 SD1075 2N36 |
From old datasheet system
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND
RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND UHF BAND, Si, NPN, RF POWER TRANSISTOR, TO-60
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| 2SC5088 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOESE AMPLIFIER APPLICATIONS)
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| BAT68-04E6433 |
SILICON, VHF-UHF BAND, MIXER DIODE
|
INFINEON TECHNOLOGIES AG
|
| BB148T/R |
VHF-UHF BAND, 39.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
NXP SEMICONDUCTORS
|
| MA2S367 |
Silicon epitaxial planar type VHF-UHF BAND, 13.25 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC[Panasonic Semiconductor]
|
| MICROSEMICORP-LOWELL-KV2201-154-11 KV31S1-154-6 |
VHF-UHF BAND, 25 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
|
| MV1636BCHIP 1N5446BCHIP 1N5461BCHIP 1N5470C 1N5446 |
VHF-UHF BAND, 27 pF, 20 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VHF-UHF BAND, 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
|
| 2SC5631 |
Silicon NPN Epitaxial UHF / VHF Wide Band Amplifier
|
HITACHI[Hitachi Semiconductor]
|
| 2SC5700 2SC5700WB-TR-E |
Silicon NPN Epitaxial VHF/UHF wide band amplifier
|
http://
Renesas Electronics Corporation
|
