PART |
Description |
Maker |
ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE 40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE 150 V, SILICON, PIN DIODE 27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
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ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET 0.5?12 GHz General Purpose Gallium Arsenide FET 0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
|
DGS20-018AS |
Gallium Arsenide Schottky Rectifier 23 A, 180 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB From old datasheet system
|
IXYS, Corp. IXYS[IXYS Corporation]
|
AH445-70 AH491-70 AH490-00 AH491-71 AH618-00 AH370 |
10 GHz - 11 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 12 GHz - 13.5 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 16.5 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 46 GHz - 50 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 20 GHz - 22 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE 18 GHz - 20 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
ATMEL CORP
|
ATF-44101 |
2-8 GHz Medium Power Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-45101 |
2-8 GHz Medium Power Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
ATF10736 |
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
|
MGR2025CT MGR2025CT_D ON1881 |
From old datasheet system GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi
|
MGRB2018CT_D ON1883 MGRB2018CT MGRB2018 |
Power Manager Gallium Arsenide Power Rectifier From old datasheet system GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc] ON Semi
|
ATF-13736 |
2-16 GHz Low Noise Gallium Arsenide FET(2-16 GHz 低噪声砷化镓 FET)
|
Agilent(Hewlett-Packard)
|
WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|