| PART |
Description |
Maker |
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| SDA20000UF SDA25000UF SDA2500UF SDA7500UF SDA10000 |
0.5 AMPS 2.5kV thru 25kV ULTRAFAST RECOVERY RECTIFIER ASSEMBLY 0.5 A, 10000 V, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
SSDI[Solid States Devices, Inc]
|
| BYX103G BYX101 BYX101G BYX102G BYX104G BYX103GT/R |
0.31 A, 10000 V, SILICON, SIGNAL DIODE HERMETIC SEALED, GLASS PACKAGE-2
High-voltage soft-recovery controlled avalanche rectifiers
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MMBD6050LT3G MMBD6050LT1G |
Switching Diode SOT23 70V ; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 0.2 A, 70 V, SILICON, SIGNAL DIODE, TO-236AB
|
ON Semiconductor
|
| BA982 LL4148 LS4154 BAV21 LS4150 |
SILICON, VHF BAND, MIXER DIODE
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA
0.15 A, 35 V, SILICON, SIGNAL DIODE
0.25 A, 250 V, SILICON, SIGNAL DIODE, DO-35
0.3 A, 50 V, SILICON, SIGNAL DIODE
|
TEMIC SEMICONDUCTORS
|
| 1N914BT-10 1N914BT-87Y 1N914BT-12A 1N914BT-85 1N91 |
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-35
0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-34
|
|
| BAT54S-V BAT54-V BAT54A-V BAT54-V10 BAT54C-V BAT54 |
Small Signal Schottky Diodes, Single and Dual
0.2 A, 30 V, SILICON, SIGNAL DIODE
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| UPA1818 UPA1818GR-9JG UPA1818GR-9JG-A UPA1818GR-9J |
Pch enhancement MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING P沟道MOS场效应晶体管开
10000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, TSSOP-8
|
NEC Corp.
NEC, Corp.
Lattice Semiconductor, Corp.
|
| PRS07 PRS07J PRS07D PRS07G PRS07G115 PRS07J115 PRS |
0.6 A, 200 V, SILICON, SIGNAL DIODE
0.6 A, 600 V, SILICON, SIGNAL DIODE HERMETIC SEALED, GLASS PACKAGE-2
0.6 A, 400 V, SILICON, SIGNAL DIODE HERMETIC SEALED, GLASS PACKAGE-2
Fast soft-recovery rectifiers
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
|
