PART |
Description |
Maker |
MX29GL256FUXFI-11G |
16M X 16 FLASH 3V PROM, 110 ns, PBGA64
|
MACRONIX INTERNATIONAL CO LTD
|
PC48F4400P0TB0E RC48F4400P0TB0EA JS28F256P33TFA RC |
32M X 16 FLASH 2.7V PROM, 95 ns, PBGA64 16M X 16 FLASH 2.7V PROM, 105 ns, PDSO56 16M X 16 FLASH 2.7V PROM, 95 ns, PBGA64
|
NUMONYX
|
MX28F160C3TXAC-11G MX28F160C3BXAC-11 MX28F160C3BXA |
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 110 ns, PBGA48
|
Macronix International Co., Ltd. PROM MACRONIX INTERNATIONAL CO LTD
|
S25FL016M0LMAI003 S25FL016M0LNAI003 |
16M X 1 FLASH 3V PROM, PDSO16 16M X 1 FLASH 3V PROM, PDSO8
|
SPANSION LLC
|
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc. SPANSION LLC
|
AM29LV256MH40FF L256ML113RI AM29LV256MH30FF AM29LV |
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 120 ns, PDSO56 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 16M X 16 FLASH 3V PROM, 110 ns, PDSO56 256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control 256兆位6 M中的x 16-Bit/32 M中的x 8位)MirrorBitTM 3.0伏特,只有统一闪存部门与VersatileI /价外控制
|
Advanced Micro Devices, Inc.
|
MBM29F017A-12 MBM29F017A-12PFTR MBM29F017A-70 MBM2 |
CAT5E PATCH CORD, 20FT ORANGE, MOLDED 1,600米8)位 16M (2M X 8) BIT 2M X 8 FLASH 5V PROM, 90 ns, PDSO40 16M (2M X 8) BIT 2M X 8 FLASH 5V PROM, 70 ns, PDSO40 CAT5E PATCH CORD, 100FT ORANGE, MOLDED 2.2A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-PDIP -40 to 85 CAT 5E BULK CABLE 100 MHZ,SHLD,PVC-BLUE
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
MBM29LV160T-80PFTR MBM29LV160B-12PFTR MBM29LV160B- |
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PDSO48 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Spansion, Inc.
|
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
|
Intel, Corp. Intel Corp. http:// Intel Corporation
|
MBM29DL163TD-90PBT MBM29DL161BD-70PFTN MBM29DL161B |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Spansion Inc. Spansion, Inc. SPANSION LLC
|
MX29LV017BTI-70G MX29LV017BTC-70G |
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 8 FLASH 3V PROM, 70 ns, PDSO40
|
Macronix International Co., Ltd.
|
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