PART |
Description |
Maker |
MWI300-17E9 |
500 A, 1700 V, N-CHANNEL IGBT
|
IXYS Corporation
|
FF450R17ME4 |
600 A, 1700 V, N-CHANNEL IGBT
|
INFINEON TECHNOLOGIES AG
|
ZXM61N02F |
1700 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
DIODES INC
|
SSM3J01T |
1700 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
|
1719-20 |
20 W, 28 V, 1700-1900 MHz common base transistor 20 Watt - 28 Volts, Class C Microwave 1700 - 1900 MHz BJT
|
GHZTECH[GHz Technology]
|
FZ3600R17HP4B2 |
IHM-B module with soft-switching Trench-IGBT4 1700 V, N-CHANNEL IGBT
|
Infineon Technologies AG
|
IXBH6N170 |
High Voltage, High Gain BIMOSFETMonolithic Bipolar MOS Transistor 12 A, 1700 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp.
|
VCO3030A |
1700-1760MHz VCO
|
CTS
|
AC1556 |
1200 TO 1700 MHz TO-8 CASCADABLE AMPLIFIER
|
Teledyne Technologies I...
|
FAR-F6CE1G4890-K221 |
Piezoelectric SAW BPF (700 to 1700 MHz)
|
Fujitsu Limited
|
SLM-20T |
1700-2000 MHz High Linearity
|
sirenza.com SIRENZA[SIRENZA MICRODEVICES]
|
DFM600BXS17-A000 |
600 A, 1700 V, SILICON, RECTIFIER DIODE B, 2 PIN
|
Dynex Semiconductor, Ltd.
|
|