| PART |
Description |
Maker |
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| EN3096A 2SC4489T-AN |
Bipolar Transistor
Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington
SMD Bipolar Power Transistor NPN Darlington
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| 2SA1585S 2SB1424 A5800357 2SB1424Q 2SA1585SR |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | SPAK
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Low Vce(sat) Transistor (-20V, -3A)
From old datasheet system
Low VCE(sat) Transistor(低VCE(sat)晶体
Low Vce(sat) Transistor (-20V/ -3A)
|
ROHM[Rohm]
Rohm CO.,LTD.
|
| IRG4BC29K IRG4BC30K IRG4BC30 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-310 |
TERM BLOCK HDR 5.08MM 3POS PCB
Low Current/ High Performance NPN Silicon Bipolar Transistor
Low Current High Performance NPN Silicon Bipolar Transistor
Low Current, High Performance NPN Silicon Bipolar Transistor
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| BFQ68 BFQ68/B |
TRANSISTOR UHF BIPOLAR BREITBAND 晶体管超高频双极BREITBAND
NPN 4 GHz wideband transistor
|
SIEMENS AG
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| IRGI4061DPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
