| PART |
Description |
Maker |
| 2SD780 |
Micro package. High DC current gain. hFE: 200TYP.(VCE=1.0V,IC=50mA).
|
TY Semiconductor Co., Ltd
|
| EL5197 EL5197CW-T7A EL5197ACS EL5197ACS-T13 EL5197 |
Single 200MHz Fixed Gain Amplifier with Enable 1 CHANNEL, VIDEO AMPLIFIER, PDSO8
ECONOLINE: RBM - New Micro Size SIP 6 Package- Industry Standard Pinout- 3kVDC Isolation- UL94V-0 Package Material- Efficiency to 85%
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| ADM1032ARM-REEL7 ADM1032AR-REEL7 ADM1032AR-1 ADM10 |
High Accuracy Remote Thermal Diode Monitor in Micro SOIC Package
|
Analog Devices
|
| AD600AR-REEL AD600SQ/883B AD600AR-REEL7 |
Dual, Low Noise, Wideband Variable Gain Amplifier, 0 dB To 40 dB Gain; Package: SOIC - Wide; No of Pins: 16; Temperature Range: Industrial SPECIALTY ANALOG CIRCUIT, PDSO16
Dual, Low Noise, Wideband Variable Gain Amplifier, 0 dB To 40 dB Gain; Package: CerDIP; No of Pins: 16; Temperature Range: Military SPECIALTY ANALOG CIRCUIT, CDIP16
|
Analog Devices, Inc.
|
| AGB3306S24Q1 AGB3306 AGB3306_REV_1.2 |
The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
50W High Linearity Low Noise Wideband Gain Block
From old datasheet system
Gain Block Amplifiers
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| AGB3307 AGB3307S24Q1 |
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
Gain Block Amplifiers
50-ohm High Linearity Low Noise Wideband Gain Block
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| MAX6709KUB MAX6709MUB MAX6709MUBT MAX6709MUB-T MAX |
Low-Voltage, High-Accuracy, Quad Voltage Monitors in µMAX Package
|
MAXIM - Dallas Semiconductor
|
| LD7215D LD7215 LD7215C |
6 GHz, 3 kW, HELIX TYPE, PPM FOCUSING, HIGH POWER GAIN, FLAT GAIN VARIATION
|
NEC[NEC]
|
| LD7215 LD7215C LD7215D |
6 GHz / 3 kW / HELIX TYPE / PPM FOCUSING / HIGH POWER GAIN / FLAT GAIN VARIATION
6 GHz, 3 kW, HELIX TYPE, PPM FOCUSING, HIGH POWER GAIN, FLAT GAIN VARIATION 6千兆赫，3千瓦，螺旋式，分之为重点，高功率增益平坦增益变化
|
NEC Corp.
NEC, Corp.
|
| BFP640 |
Digital Transistors - NPN SiGe RF Transistor, high gain low noise RF transistor in SOT343 Package, 4V, 50mA
|
Infineon
|
| BR64 |
ECONOLINE: ROM - Micro Size SIP4 Package- 3kVDC Isolation- Industry Standard Pinout- UL94V-0 Package Material- Custom Solutions Available- Cost
|
Bytes
|
| 2SD2114K 2SD2144S A5800324 2SD2114KW 2SD2144SU 2SD |
High-current Gain MediumPower Transistor (20V/ 0.5A)
High-current Gain MediumPower Transistor (20V, 0.5A)
High-current Gain Medium Power Transistor (20V,0.5A)
From old datasheet system
|
Rohm CO.,LTD.
ROHM[Rohm]
|
